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Lasers, Semiconductor MeSH Descriptor Data 2024


MeSH Heading
Lasers, Semiconductor
Tree Number(s)
E07.632.490.480
E07.710.520.480
Unique ID
D054023
RDF Unique Identifier
http://id.nlm.nih.gov/mesh/D054023
Annotation
/ther use: coordinate IM with disease /‌surg (IM), but for low-level laser therapy coordinate / ther use IM with disease /‌radiother (IM) + LOW-LEVEL LIGHT THERAPY (IM)
Scope Note
Lasers with a semiconductor diode as the active medium. Diode lasers transform electric energy to light using the same principle as a light-emitting diode (LED), but with internal reflection capability, thus forming a resonator where a stimulated light can reflect back and forth, allowing only a certain wavelength to be emitted. The emission of a given device is determined by the active compound used (e.g., gallium arsenide crystals doped with aluminum or indium). Typical wavelengths are 810, 1,060 and 1,300 nm. (From UMDNS, 2005)
Entry Term(s)
Diode Lasers
GaAlAs Lasers
GaAs Lasers
Gallium Aluminum Arsenide Lasers
Gallium Arsenide Lasers
Lasers, GaAlAs
Lasers, GaAs
Lasers, Gallium Aluminum Arsenide
Lasers, Gallium Arsenide
Lasers, Quantum Cascade
Quantum Cascade Lasers
Semiconductor Diode Lasers
Previous Indexing
Lasers (1986-2007)
Public MeSH Note
2008
History Note
2008
Date Established
2008/01/01
Date of Entry
2007/07/09
Revision Date
2018/06/29
Lasers, Semiconductor Preferred
Quantum Cascade Lasers Narrower
Gallium Aluminum Arsenide Lasers Narrower
Gallium Arsenide Lasers Narrower
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